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8803 Rueschlikon, Switzerland

At Albis, we offer a large catalogue of GaAs photodiodes for various applications from few Gb/s up to high data rate of 25 Gb/s. All photodiodes offer an excellent trade-off between fast speed of response combined with a large active diameter and high responsivity in the wavelength region from 830 to 860 nm. The pad metallization can be either optimized for wire or flip-chip bonding. The arrays feature a channel pitch with photolithographic precision which strongly simplifies optical alignement with fiber ribbon or photonic integrated circuits.

Our photodiodes can be customized. Whether you prefer wire-bonding or flip-chip soldering , array or single channel devices our team is ready to tackle your requirements. Like to know more about customization, click here

Single channel GaAs p-i-n photodiode chips

Product NameSpeedActive DiameterIlluminationDetails
PDCS30T-GS25 Gb/s30TopRead More
PDCS32T-GS25 Gb/s32TopRead More
PDCS70T-GS10 Gb/s70TopRead More
PDCS100T-GS5 Gb/s100TopRead More

Multiple channel GaAs p-i-n photodiode chips

Product NameSpeedActive DiameterIlluminationDetails
PDCAxx-30-GS25 Gb/s30TopRead More
PDCAxx-70-GS10 Gb/s70TopRead More
PDCAxx-100-GS5 Gb/s100TopRead More