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PD40E1
50G Bottom Illuminated Photodiode

  

Ultra high speed InGaAs/InP photodiode chip optimized for applications up to 50 GHz. The bottom illuminated p-i-n photodiode offers an excellent responsivity and high speed of response in the wavelength region from 1260 to 1620 nm. Over the entire wavelength range a broadband AR coating provides low reflectivity and high return loss.

Features

  • Ultra high speed
  • Easy optical coupling through large backside light entry area
  • Typical responsivity of 0.6 A/W
  • Low capacitance: 55 fF
  • G-S-G pad configuration  with support pads for flip-chip soldering

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