25 Gb/s GaAs photodiode chip with large optical aperture. The top-illuminated p-i-n photodiode structure is optimized for multi-mode fiber based 25 Gb/s data- and telecom applications and offers an excellent responsivity and high speed of response in the wavelength region from 830 to 860 nm.
The device has a low capacitance and achieves full speed at low bias voltages.
- Large optical aperture
- High responsivity: 0.53 A/W @ 850 nm
- Low capacitance: 100 fF
- Low dark current: 0.1 nA