Twin array of balanced, ultra high-speed InGaAs/InP photodiodes with separate anode and cathode pads in a Ground-Signal-Signal-Ground arrangement. Each channel is optimized for data rates of 28 Gb/s and above. The 250 μm pitch between individual photodiodes results in a very compact chip design.
- Separate anode and cathode pads in a G-S-S-G arrangement
- Large cathode pads with room for two wire bonds
- High responsivity: 0.8 A/W
- Low bias voltage: 2 V