InGaAs/InP high-speed photodiode chip with a tapered coplanar transmission line and an integrated backside lens. The bottom illuminated p-i-n photodiode structure is optimized for data- and telecom applications of at least 12 Gb/s and offers an excellent responsivity and high speed of response in the wavelength region from 1260 to 1620 nm. The photodiode has a low capacitance and achieves full speed at low bias voltages.
The integrated backside lens focuses the incoming light beam on the topside detecting area, enabling an easy and efficient optical coupling.
- Bottom illuminated 12 Gb/s InGaAs photodiode with integrated backside lens
- Large lens diameter of 100 µm
- High responsivity: 0.9 A/W
- Low capacitance: 120 fF
- Low bias voltage: 1.5 V