InGaAs/InP photodiode chip with a G-S-G pad configuration offering excellent responsivity at wavelengths of 850 nm and 1310 nm.
The large optical aperture allows easy alignment to single- and multimode fibers. The top illuminated p-i-n photodiode is optimized for short-reach 850 nm and 1310 nm based high-speed data links up to 12 Gb/s. The device has a low capacitance and achieves full speed at low bias voltages.
- Top illuminated 10 Gb/s InGaAs photodiode
- Large optical aperture
- High responsivity: 0.9 A/W @ 1310 nm
- Low capacitance: 260 fF
- Low dark current: 3 nA
- Wavelength specific AR coatings