InGaAs/InP high speed photodiode chip with a dual-pad layout.
The top illuminated photodiode is optimized for single-mode data- and telecom applications up to 12 Gb/s and offers an excellent responsivity and a high speed of response in the wavelength region from 1260 to 1620 nm. Over this entire wavelength range, an AR coating provides low reflectivity and high return loss. The photodiode is optimized to provide the best trade-off between a large active area and low capacitance and achieves full speed at low bias voltages.
- Top illuminated 10 Gb/s InGaAs photodiode
- Large optical aperture
- High responsivity: 0.9 A/W
- Low capacitance: 220 fF
- Low dark current: 2 nA