Bottom illuminated InGaAs/InP photodiode chip with a dual-pad layout and a large optical aperture.
The bottom illuminated photodiode is optimized for single-mode data- and telecom applications up to 2.7 Gb/s and offers an excellent responsivity and high speed of response in the wavelength region from 1260 to 1620 nm. The photodiode achieves full speed at low bias voltages and has a pad metallization optimized for wire-bonding or flip-chip soldering.
- Bottom illuminated 2.5 Gb/s InGaAs photodiode
- Large optical aperture
- High responsivity: 1.0 A/W
- Low dark current: 8 nA
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