Top illuminated InGaAs/InP monitor photodiode chip featuring a large optical aperture with a diameter of 300 µm. The p-i-n photodiode structure is optimized for monitoring the optical output power of a wide variety of semiconductor lasers such as edge emitters and VCSELs.
This monitor photodiode offers an excellent responsivity in the wavelength region from 980 nm to 1620 nm.
- Large topside 300 µm optical aperture
- Wide wavelength range from 980 nm to 1620 nm
- High responsivity: 0.95 A/W
- Low dark current: <1 nA
- Also available on ceramic wrap-around carrier