APD10E1
10 Gb/s Long-Wavelength APD

Top-illuminated, high speed avalanche photodiode chip with a dual pad layout and a large optical aperture. The APD is optimized for single-mode Gigabit Passive Optical Networks (GPON) and 10 Gb/s SONET/SDH telecom applications. A key feature of this innovative APD is low excess noise, enabling receiver sensitivities of -29 dBm for 10 Gb/s NRZ signals when used with an appropriate TIA.

Features

• Enables a receiver sensitivity of –29 dBm with commercially available TIAs
• High gain-bandwidth product: 90 GHz
• Large optical aperture
• Low operating bias: 29 V
• Low temperature dependence: 25 mV/°C
• Low capacitance: 140 fF

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